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| Shenzhen SI Semiconductors Co., LTD. Product Specification MJE LOW VOLTAGE SERIES TRANSISTORS FEATURES APPLICATION: HIGH VOLTAGE CAPABILITY HIGH SPEED SWITCHING MJE13009L WIDE SOA SUITABLE FOR 110V CIRCUIT MODE ELECTRONIC TRANSFORMER FLUORESCENT LAMP SWITCH MODE POWER SUPPLY ELECTRONIC BALLAST Absolute Maximum Ratings PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Tc=25C SYMBOL VCBO VCEO VEBO IC PC Tj Tstg VALUE 400 200 9 20 80 150 -65-150 TO-220 UNIT V V V A W C C Electronic Characteristics CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Collector-Emitter Voltage Emitter -Base Voltage Collector-Emitter Saturation Voltage Tc=25C SYMBOL ICBO ICEO VCEO VEBO Vces TEST CONDITION VCB=400V VCE=200V,IB=0 IC=10mA,IB=0 IE=1mA,IC=0 IC=2.0A,IB=0.4A IC=8.0A,IB=1.6A IC=12.0A,IB=3.0A IC=5.0A,IB=1.0A VCE=5V,IC=10 mA VCE=5V,IC=2.0 A VCE=5V,IC=15.0 A 8 10 5 40 200 9 0.5 1.0 2.0 1.5 V V MIN MAX 100 250 UNIT A A V V Base-Emitter Saturation Voltage DC Current Gain Vbes hFE Si semiconductors 2004.10 1 Shenzhen SI Semiconductors Co., LTD. Product Specification MJE LOW VOLTAGE SERIES TRANSISTORS SOA (DC) 100 Ic(A) 120 100 MJE13009L % Pc Tj 10 80 IS/B 1 60 Ptot 40 0.1 20 0.01 1 10 100 Vce(V) 1000 0 0 50 100 150 Tj( ) 200 100 hFE hFE - Ic 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= - 40 10 Tj= - 40 Vce=1.5V Vce=5V 1 0.01 0.1 1 10 Ic(A) 100 1 0.01 0.1 1 10 Ic(A) 100 10 Vces(v) hFE=5 Vces - Ic 10 Tj=125 Tj= - 40 Vbes(v) hFE=5 Vbes - Ic 1 Tj=25 Tj=25 1 Tj= - 40 0.1 Tj=125 0.01 0.01 0.1 1 10 Ic(A) 100 0.1 0.01 0.1 1 10 Ic(A) 100 Si semiconductors 2004.10 2 Shenzhen SI Semiconductors Co., LTD. Product Specification TO-220 MECHANICAL DATA UNIT mm SYMBOL A B B1 b b1 c D D1 E 5.9 0.4 16.5 6.9 10.7 0.6 1.2 min 3.5 nom max 4.8 2.4 1.8 SYMBOL e F L L1 L2 P Q Q1 Z 2.5 2.0 3.0 3.1 2.8 1.1 12.5 min nom 2.54 1.4 14.5 3.5 6.3 max Si semiconductors 2004.10 3 |
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